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2SC5998
Silicon NPN Epitaxial High Frequency Medium Power Amplifier
REJ03G0169-0100Z Rev.1.00 Apr.20.2004
Features
* High Transition Frequency fT = 11 GHz typ. * High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz * High Collector to Emitter Voltage VCEO = 5 V * Ideal for up to 2GHz applications. e.g FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier
Outline
MPAK
3 1 2 1. Collector 2. Base 3. Emitter
Note:
Marking is "YC-".
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 13 5 1.5 500 700note 150 -55 to +150 Unit V V V mA mW C C
Note: Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )
Rev.1.00, Apr.20.2004, page 1 of 10
2SC5998
Electrical Characteristics
(Ta = 25C)
Item DC current transfer ratio Collector output capacitance Reverse Transfer Capacitance Transition Frequency Maximum Available Gain Power Gain Symbol hFE Cob Cre fT MAG PG Min 110 11 Typ 150 2.0 0.95 11 22 13 28 70 Max 190 1.5 Unit pF pF GHz dB dB dBm % Test Conditions VCE = 3 V, IC = 100 mA VCB = 3 V, IE = 0, f = 1 MHz VCB = 3 V, f = 1 MHz, Emitter grounded VCE = 3.6 V, IC = 100 mA, f = 1 GHz VCE = 3.6 V, IC = 100 mA, f = 0.5 GHz VCE = 3.6 V, ICq = 20 mA, f = 0.5 GHz, Pin=+16 dBm VCE = 3.6 V, ICq = 20 mA, f = 0.5 GHz VCE = 3.6 V, ICq =20 mA, f = 0.5 GHz
1dB Compression Point at output P1dB Added Power Efficiency PAE
Main Characteristics
Collector Power Dissipation Curve 1.0
Collector Power Dissipation Pc* (W) IC (mA)
500
Typical Output Characteristics
4.0 mA 3.5 mA 3.0 mA
*FR - 4(25 x 30 x 1mm) on PCB 0.8 0.6
400 300
2.5 mA
2.0 mA
Collector Current
0.4 0.2
200
1.5 mA
1.0 mA
100
IB = 0.5 mA
0
50 100 150 200 Ambient Temperature Ta (C)
0
1
2
3
4
5
Collector to Emitter Voltage
VCE (V)
Typical Transfer Characteristics 500
IC (mA)
DC Current Transfer Ratio vs. Collector Current 200
hFE DC Current Transfer Ratio
VCE = 3 V 400
150
Collector Current
300
100
200
50 VCE = 3 V 0 1
100
0
0.2 0.4 0.6 Base to Emitter Voltage
0.8 1.0 VBE (V)
10 100 Collector Current IC (mA)
1000
Rev.1.00, Apr.20.2004, page 2 of 10
2SC5998
Collector Output Capacitance vs. Collector to Base Voltage 4.0 IE = 0 f = 1 MHz 3.0 Reverse Transfer Capacitance vs. Collector to Base Voltage 2.0 Emitter grounded f = 1 MHz 1.5
Reverse Transfer Capacitance Cre (pF)
Collector Output Capacitance Cob (pF)
2.0
1.0
1.0
0.5
0
1 2 3 Collector to Base Voltage
4 5 VCB (V)
0
1 2 3 Collector to Base Voltage
4 5 VCB (V)
Transition Frequency vs. Collector Current 12
Transition Frequency fT (GHz)
10 8 6 4 2 0 1
f = 1 GHz VCE=3.6V
G (dB)
S21 Parameter, Maximum Available Gain, Maximum Stable Gain vs. Frequency 40 VCE = 3.6 V IC = 100 mA 30
MSG
20
|S21|2 MAG
Gain
10
10 100 Collector Current IC (mA)
1000
0 0.1
1 Frequency
10 f (GHz)
Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB)
Maximum Available Gain, Maximum Stable Gain vs. Collector Current 25 VCE = 3.6 V f = 0.5GHz 20 1GHz
15 10
2GHz
5 0 1 10 Collector Current 100
3GHz
1000
IC (mA)
Rev.1.00, Apr.20.2004, page 3 of 10
2SC5998
Pin vs. Pout, PG 40 VCE = 3.6 V 35 Icq = 20 mA f = 0.5GHz 30 25 20 15 10 5 0 0 5 10 15 20 Pin (dBm) PG 40 Pout
Pout (dBm), PG(dB)
Pin vs. Pout, PG VCE = 4.5 V 35 Icq = 20 mA f = 0.5GHz 30 25 20 15 10 5 30 0 0 5 10 15 20 Pin (dBm) PG
Pout (dBm), PG(dB)
Pout
25
25
30
Operation Current, Power Added Efficiency
0.6 VCE = 3.6 V Icq = 20 mA f = 0.5GHz
Operation Current, Power Added Efficiency
0.6 VCE = 4.5 V Icq = 20 mA 0.5 f = 0.5GHz 0.4
Operation Current Ic op(A)
Operation Current Ic op(A)
Ic op
100 80 60 40 20 0
PAE(%)
0.5 0.4 0.3
100
Ic op
80
PAE(%)
PAE
0.3 0.2 0.1 0 0 5 10 15 20 25 30 Pin (dBm)
60
PAE
0.2 0.1 0 0 5 10 15 20 25 30 Pin (dBm) 40 20 0
Harmonic Distortion
40 30 20 VCE = 3.6 V Icq = 20 mA f = 0.5GHz 40 30 20
Harmonic Distortion
VCE = 4.5V Icq = 20 mA f = 0.5GHz
Pout (dBm)
2nd HD
10 0 -10 -20 -30 -20 0 10 -10 Pin (dBm) 20 30 Fund (1tone)
Pout (dBm)
2nd HD
10 0 Fund (1tone)
3rd HD
-10 -20 -30 -20 0 10 -10 Pin (dBm)
3rd HD
20
30
Rev.1.00, Apr.20.2004, page 4 of 10
2SC5998
Intermodulation Distortion 40 30 20 VCE = 3.6 V Icq = 20 mA f = 0.5GHz f=1MHz Fund (1tone) 40 30 IMD3 20
Intermodulation Distortion VCE = 4.5 V Icq = 20 mA f = 0.5GHz f=1MHz Fund (1tone) IMD5
Pout (dBm)
10 0 -10 -20
Pout (dBm)
IMD3
10 0 -10 -20
IMD5
-30
-20
0 10 -10 Pin (dBm)
20
30
-30
-20
0 10 -10 Pin (dBm)
20
30
0.5GHz Evaluation Circuit
VCC
VBB
1F
1F
100 pF 68 30 pF 10 56 nH 56 nH 5.1 nH
100 pF
5.1 nH
20 pF
OUT
20 pF
IN
10 pF
1 pF
1 pF
8 pF
Rev.1.00, Apr.20.2004, page 5 of 10
2SC5998
S parameter
(VCE = 3.6 V, IC = 20 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.643 0.635 0.641 0.645 0.651 0.657 0.662 0.667 0.672 0.677 0.682 0.686 0.690 0.696 0.701 0.706 0.711 0.716 0.721 0.725 0.731 0.736 0.741 0.745 0.750 0.756 0.760 0.764 0.768 0.773 ANG -108.1 -143.5 -158.8 -168.0 -174.7 -180.0 175.5 171.4 167.7 164.2 161.1 158.0 155.1 152.2 149.6 147.0 144.5 142.1 139.7 137.4 135.2 133.0 130.9 128.9 126.9 125.0 123.0 121.1 119.3 117.6 S21 MAG 31.06 18.05 12.26 9.17 7.24 5.96 5.05 4.37 3.85 3.43 3.10 2.83 2.60 2.41 2.24 2.09 1.97 1.85 1.75 1.66 1.58 1.51 1.44 1.38 1.33 1.28 1.23 1.18 1.14 1.11 ANG 121.7 101.3 91.2 84.4 79.3 75.0 71.2 67.9 64.8 61.9 59.1 56.4 53.7 51.2 48.6 46.1 43.8 41.4 39.0 36.7 34.5 32.2 30.0 27.8 25.7 23.6 21.5 19.5 17.5 15.6 S12 MAG 0.0292 0.0371 0.0437 0.0500 0.0560 0.0641 0.0716 0.0795 0.0874 0.0949 0.1024 0.1100 0.1176 0.1251 0.1322 0.1391 0.1457 0.1527 0.1592 0.1653 0.1714 0.1771 0.1831 0.1884 0.1940 0.1995 0.2043 0.2083 0.2130 0.2172 ANG 48.9 41.8 45.4 48.0 49.6 51.3 52.4 52.6 53.2 52.3 52.0 51.0 50.3 49.2 48.1 47.2 45.9 44.7 43.4 41.9 40.6 39.4 38.0 36.5 35.1 34.0 32.5 31.2 29.7 28.2 S22 MAG 0.630 0.469 0.423 0.409 0.404 0.407 0.410 0.415 0.420 0.426 0.431 0.436 0.442 0.448 0.455 0.462 0.469 0.476 0.483 0.489 0.496 0.504 0.511 0.519 0.526 0.534 0.540 0.548 0.555 0.562 ANG -81.4 -115.8 -134.7 -147.1 -155.7 -162.6 -168.4 -173.4 -177.7 178.2 174.7 171.2 168.1 165.1 162.2 159.6 157.1 154.7 152.4 150.1 148.0 145.9 144.0 141.9 140.0 138.1 136.3 134.5 132.8 131.2
Rev.1.00, Apr.20.2004, page 6 of 10
2SC5998
S parameter
(VCE = 3.6 V, IC = 50 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.586 0.616 0.629 0.638 0.645 0.650 0.656 0.661 0.665 0.670 0.674 0.678 0.683 0.688 0.693 0.697 0.702 0.707 0.712 0.716 0.722 0.727 0.731 0.736 0.741 0.746 0.751 0.754 0.758 0.763 ANG -142.9 -163.8 -172.9 -178.7 176.8 172.8 169.3 165.9 162.8 159.8 157.0 154.2 151.7 149.1 146.6 144.2 141.9 139.6 137.4 135.2 133.1 131.1 129.1 127.1 125.2 123.4 121.5 119.7 117.9 116.3 S21 MAG 38.37 20.35 13.52 10.03 7.89 6.48 5.48 4.75 4.18 3.73 3.38 3.08 2.83 2.62 2.44 2.28 2.14 2.02 1.91 1.81 1.73 1.65 1.57 1.51 1.45 1.39 1.34 1.29 1.25 1.21 ANG 109.9 94.5 86.7 81.3 77.1 73.6 70.4 67.5 64.8 62.2 59.7 57.2 54.8 52.4 50.0 47.7 45.5 43.2 41.0 38.8 36.7 34.5 32.5 30.3 28.3 26.3 24.3 22.3 20.5 18.6 S12 MAG 0.0190 0.0276 0.0355 0.0448 0.0532 0.0628 0.0717 0.0808 0.0904 0.0989 0.1075 0.1162 0.1247 0.1326 0.1403 0.1478 0.1550 0.1625 0.1690 0.1756 0.1819 0.1879 0.1941 0.1994 0.2054 0.2108 0.2152 0.2200 0.2244 0.2286 ANG 53.1 57.6 61.5 62.6 63.9 63.6 63.0 62.2 61.7 59.9 58.4 56.9 55.5 53.9 52.4 50.9 49.2 47.5 46.0 44.3 42.5 41.1 39.4 37.7 36.3 34.7 33.2 31.6 30.2 28.5 S22 MAG 0.525 0.450 0.441 0.445 0.449 0.457 0.463 0.469 0.475 0.481 0.487 0.492 0.498 0.504 0.510 0.516 0.523 0.529 0.535 0.541 0.548 0.555 0.561 0.567 0.574 0.580 0.586 0.593 0.600 0.606 ANG -110.1 -140.8 -154.9 -163.4 -169.9 -174.8 -179.2 176.8 173.5 170.0 167.0 164.1 161.4 158.7 156.2 153.8 151.5 149.3 147.2 145.1 143.0 141.1 139.2 137.3 135.3 133.6 131.8 130.2 128.5 126.9
Rev.1.00, Apr.20.2004, page 7 of 10
2SC5998
S parameter
(VCE = 3.6 V, IC = 100 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.587 0.618 0.631 0.640 0.647 0.652 0.657 0.662 0.666 0.671 0.675 0.678 0.683 0.687 0.692 0.696 0.701 0.706 0.711 0.715 0.721 0.725 0.730 0.734 0.739 0.744 0.749 0.753 0.757 0.761 ANG -158.5 -171.9 -178.0 177.3 173.4 170.0 166.8 163.7 160.8 158.0 155.4 152.7 150.2 147.8 145.4 143.1 140.8 138.6 136.4 134.3 132.2 130.2 128.2 126.3 124.4 122.6 120.8 119.0 117.2 115.5 S21 MAG 40.54 20.95 13.81 10.20 8.02 6.58 5.58 4.84 4.27 3.81 3.45 3.15 2.90 2.69 2.50 2.34 2.20 2.08 1.97 1.87 1.78 1.69 1.62 1.55 1.49 1.43 1.38 1.33 1.28 1.24 ANG 105.4 91.8 85.0 80.2 76.5 73.3 70.4 67.7 65.2 62.8 60.3 58.0 55.6 53.3 50.9 48.7 46.5 44.3 42.1 39.9 37.8 35.7 33.6 31.5 29.5 27.5 25.6 23.6 21.8 19.9 S12 MAG 0.0155 0.0245 0.0342 0.0433 0.0532 0.0630 0.0728 0.0829 0.0924 0.1009 0.1097 0.1187 0.1273 0.1354 0.1434 0.1513 0.1586 0.1658 0.1733 0.1799 0.1860 0.1917 0.1981 0.2038 0.2099 0.2151 0.2198 0.2242 0.2290 0.2326 ANG 56.9 66.6 69.1 70.4 69.5 68.0 66.8 65.5 64.2 62.6 60.7 58.9 57.3 55.4 53.6 52.1 50.2 48.6 46.8 45.1 43.3 41.7 40.1 38.3 36.7 35.1 33.4 31.9 30.3 28.7 S22 MAG 0.499 0.459 0.460 0.467 0.473 0.481 0.487 0.493 0.498 0.504 0.510 0.515 0.520 0.526 0.531 0.538 0.543 0.549 0.555 0.561 0.567 0.574 0.580 0.586 0.592 0.599 0.605 0.611 0.617 0.623 ANG -123.7 -150.4 -161.9 -169.2 -174.7 -179.2 177.0 173.3 170.3 167.1 164.3 161.5 159.0 156.5 154.0 151.7 149.5 147.4 145.3 143.3 141.3 139.4 137.5 135.6 133.8 132.0 130.3 128.7 127.0 125.4
Rev.1.00, Apr.20.2004, page 8 of 10
2SC5998
S parameter
(VCE = 3.6 V, IC = 200 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.607 0.631 0.646 0.654 0.660 0.664 0.668 0.672 0.676 0.680 0.684 0.687 0.691 0.695 0.700 0.704 0.708 0.713 0.718 0.722 0.728 0.732 0.736 0.740 0.745 0.750 0.755 0.758 0.762 0.767 ANG -166.7 -176.2 178.9 175.0 171.4 168.2 165.1 162.2 159.4 156.7 154.2 151.6 149.2 146.7 144.4 142.1 139.9 137.7 135.5 133.5 131.4 129.4 127.5 125.6 123.7 121.9 120.1 118.3 116.5 114.9 S21 MAG 39.88 20.31 13.30 9.81 7.72 6.35 5.40 4.70 4.15 3.72 3.37 3.09 2.84 2.64 2.46 2.30 2.17 2.05 1.94 1.84 1.75 1.67 1.60 1.53 1.47 1.42 1.36 1.32 1.27 1.23 ANG 103.2 90.5 84.3 80.0 76.6 73.7 70.9 68.4 65.9 63.5 61.1 58.6 56.3 53.9 51.6 49.3 47.0 44.8 42.6 40.4 38.3 36.1 34.1 31.9 29.9 27.9 26.0 24.0 22.2 20.3 S12 MAG 0.0111 0.0231 0.0332 0.0443 0.0536 0.0633 0.0737 0.0836 0.0934 0.1022 0.1111 0.1201 0.1292 0.1372 0.1452 0.1529 0.1599 0.1679 0.1748 0.1815 0.1880 0.1941 0.2001 0.2059 0.2117 0.2166 0.2217 0.2262 0.2314 0.2348 ANG 80.5 72.6 72.3 72.9 72.5 70.8 69.1 67.3 65.5 63.6 61.8 60.1 58.2 56.2 54.4 52.7 50.9 49.1 47.4 45.4 43.8 42.0 40.3 38.6 37.0 35.4 33.7 32.1 30.5 28.9 S22 MAG 0.492 0.471 0.474 0.482 0.488 0.493 0.499 0.504 0.508 0.514 0.518 0.522 0.527 0.532 0.539 0.544 0.549 0.555 0.561 0.567 0.573 0.580 0.586 0.592 0.598 0.605 0.609 0.616 0.622 0.628 ANG -131.3 -155.0 -165.6 -172.3 -177.5 178.3 174.6 171.2 168.2 165.2 162.5 159.9 157.5 155.1 152.8 150.5 148.3 146.2 144.2 142.3 140.3 138.4 136.6 134.7 132.9 131.2 129.4 127.8 126.1 124.5
Rev.1.00, Apr.20.2004, page 9 of 10
2SC5998
Package Dimensions
As of January, 2003
Unit: mm
0.65
0.10 0.4 + 0.05 -
0.16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.95
1.9 0.2 2.95 0.2
0.3
+ 0.2 1.1 - 0.1
0.65
2.8
Package Code JEDEC JEITA Mass (reference value)
MPAK(T) -- Conforms 0.011 g
Ordering Information
Part Name 2SC5998YC Quantity 3000 Shipping Container 178 taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.1.00, Apr.20.2004, page 10 of 10
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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